Etude théorique de la polarisation dans les semiconducteurs de la famille des nitrures : application aux photopiles solaires a multi-puits quantiques inxga1-xn/gan .
Etude théorique de la polarisation dans les semiconducteurs de la famille des nitrures : application aux photopiles solaires a multi-puits quantiques inxga1-xn/gan .
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Date
2021-12-16
Auteurs
BELADJAL Khaled ibn el walid
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Éditeur
Université Oran1 Ahmed Ben Bella
Résumé
In this Ph.D. thesis, we will conduct a deep study of the polarization effect in III-V nitrides semiconductors: GaN, InN, AlN and InxGa1-xN as well as InxGa1-xN/GaN multiple quantum well nanostructures. We use different theories as ab-intio, k.P, Schr?dinger-Poisson…, we will then study the consequences on the InxGa1-xN/GaN multiple quantum well based solar cells. The objective of this work is to study the spontaneous polarization in III-nitrides alloys using the Berry Phase approach as implemented in the Full Potential Linearized Augmented Plane Wave method (BerryPI software). Then we determine the piezoelectric polarization through the study of structural, elastic properties using DFT computations in conjunction with Martin's transformation. Finally, we examined the effect of polarization on the performance of InxGa1-xN/GaN multiple quantum well solar cells.
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Mots-clés
Polarization, III-Nitrides, Solar Cells, Multiple Quantum Well, InxGa1-xN and GaN. GaN, InN, AlN, DFT, Berry Phas, BerryPI software