Study of solar cells based on heterostructures of II-VI oxide semiconductors (ZnO, ZnCoO, ZnMnO) on III-V bismuthides (GaAsBi, GaSbBi, GaAsSbBi).
Study of solar cells based on heterostructures of II-VI oxide semiconductors (ZnO, ZnCoO, ZnMnO) on III-V bismuthides (GaAsBi, GaSbBi, GaAsSbBi).
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Date
2025-06-30
Auteurs
CHAREF Azzeddine
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Universit2 Oran1
Résumé
This study focuses on enhancing the performance of Concentrated Solar Photovoltaic (CSPV) modules using improved oxide layers and a GaSb substrate infused with bismuth-arsenic (Bi-As) compounds. Two designs were analyzed: one using pure ZnO as the window layer, and the other using Co-doped ZnO (Zn₀.₉₄Co₀.₀₆O). Both configurations incorporated GaSbBi and GaAsSbBi layers, doped with 3% and 6% bismuth, respectively. The results demonstrated a clear efficiency boost with Zn₀.₉₄Co₀.₀₆O, regardless of GaAsSbBi layer thickness. The ZnO-based module achieved 13.55% conversion efficiency, while the Co-doped variant reached 15.89%, with only a slight drop in fill factor. This performance enhancement confirms the effectiveness of Co-doped ZnO as an advanced window layer, promoting higher light absorption and energy conversion. These findings offer a promising direction for CSPV module optimization, paving the way for more efficient and sustainable solar technologies.
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Mots-clés
Concentrated Solar Photovoltaics (CSPV); Co-doped ZnO; GaSbBi; GaAsSbBi; Bismuth–Arsenic Compounds; Window Layer Engineering; Band Gap Tuning; Solar Energy Conversion Efficiency; Photovoltaic Module Optimization; Heterojunction Design.